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Thursday, July 16, 2020 | History

1 edition of Ion Implantation in Semiconductors 1976 found in the catalog.

Ion Implantation in Semiconductors 1976

by Fred Chernow

  • 314 Want to read
  • 3 Currently reading

Published by Springer US in Boston, MA .
Written in English

    Subjects:
  • Physics

  • Edition Notes

    Statementedited by Fred Chernow, James A. Borders, David K. Brice
    ContributionsBorders, James A., Brice, David K.
    Classifications
    LC ClassificationsQC176-176.9
    The Physical Object
    Format[electronic resource] /
    Paginationv.
    ID Numbers
    Open LibraryOL27047279M
    ISBN 101461341981, 1461341965
    ISBN 109781461341987, 9781461341963
    OCLC/WorldCa852791803

      Book Condition: New. Publisher/Verlag: Springer, Berlin | A Comprehensive Bibliography | During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of references of the world's literature on ion implantation as applied to micro­  › Books › Engineering & Transportation › Engineering.

    Ion implantation is an adding process in which dopant atoms are forcefully added into a semiconductor substrate by means of energetic ion beam injection. It is the dominant doping method in the semiconductor industry and is commonly used for various doping processes in IC fabrication. Figure shows the relationship of the ion implantation /8/Ion-Implantation//ch8.   Zn implantation (dose 5×10 1 5 cm − 2) and subsequent diffusion were carried out on GaAs wafers and on liquid‐phase epitaxial GaAs layers. A silicon nitride cap was deposited by chemical vapor deposition (CVD) or by sputtering either before or after implantation. Profiles were determined with Secondary Ion Mass Spectrometry and Differential Hall Effect measurements and damage was

    A model for the diffusion of implanted interstitials during implantation is introduced and shown to be able to account for the tails observed in ion profiles. It is argued that mechanisms of ionization‐enhanced diffusion can explain some of the anomalous diffusion mechanisms observed in semiconductors. Indications for the existence of such mechanisms in the field of ion implantation in  › Home › Departments › Physics › PHYSICS_FACPUB › We report on the effects of the As/P intermixing induced by phosphorus ion implantation in InAs/InP quantum dashes (QDas) on their photoluminescence (PL) properties. For nonintermixed QDas, usual temperature-dependent PL properties characterized by a monotonic redshift in the emission band and a continual broadening of the PL linewidth as the


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Ion Implantation in Semiconductors 1976 by Fred Chernow Download PDF EPUB FB2

The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 :// The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries.

As has become the custom at these conferences,  › Physics › Condensed Matter Physics. Ion Implantation in Semiconductors [Fred Chernow] on *FREE* shipping on qualifying offers. The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August Papers were delivered by scientists and engineers from 15 countries International Conference on Ion Implantation in Semiconductors and Other Materials (5th: Boulder, Colo.).

Ion Implantation in semiconductors, New York: Plenum Press, © (OCoLC) Online version: International Conference on Ion Implantation in Semiconductors and Other Materials (5th: Boulder, Colo.). Get this from a library. Ion Implantation Ion Implantation in Semiconductors 1976 book Semiconductors [Fred Chernow; James A Borders; David K Brice] -- The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August Papers were delivered by Ion Implantation in Semiconductors Proceedings of the II.

International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects May 24–28,Garmisch-Partenkirchen, Bavaria, Germany This use of ion implantation is being adopted by industry.

Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in The second conference in this series was held at Garmish-Partenkirchen, Germany, in Additional Physical Format: Online version: Carter, G.

(George), Ion implantation of semiconductors. London: Edward Arnold, (OCoLC) Ion implantation was first applied to semiconductors over 30 years ago as a means of introducing controllable concentrations of n- and p-type dopants at precise depths below the :// The high-dose implantation and the trends of ion implantation in silicon technology are also considered.

The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book :// 1 day ago  Ion Implantation in Semiconductors por Susumu Namba,disponible en Book Depository con envío ://   Figure 2.

Welding of carbon nanotubes by keV ion implantation [11]. Recently, a low-energy FIB system has been developed for controlled three-dimensional (3D) micromachining and fabricates ultra-modern micro and nanodevices used in different applications [].Either this system can be used for precise doping in nanoscale regime or implant in few atoms in biological samples for DNA damage Ion Implantation in Semiconductors Proceedings of the II.

International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects May 24–28,Garmisch-Partenkirchen, Bavaria, Germany.

Editors: Ruge, Ingolf, Graul, J. (Eds.) Free  › Physics › Condensed Matter Physics. During the years since the first conference in this series was held at Thousand Oaks, California, inion implantation has been an expanding and exciting research area.

The advances in this field were so rapid that a second conference convened at Garmisch­ Partenkirchen, Germany, in  › Physics › Condensed Matter Physics. 3 Lattice Disorder and Outdiffusion in Ion Implanted InSb and CdTe.- IV.4 Ion-Implantation of Nitrogen into n-Type Cadmium Sulfide.- IV.5 Infrared Studies of SiC, Si3N4, and SiO2 Formation in Ion-Implanted Silicon.- IV.

6 Ion Implantation and Amorphous Materials.- IV.7 Raman Spectra of Amorphous Semiconductors Prepared by Ion Bombardement.- Ion Implantation in Semiconductors: Silicon and Germanium covers the developments in the major basic aspects in ion implantation in silicon and germanium.

This book is composed of six chapters and begins with a discussion on the factors affecting the electrical characteristics of implanted layers in silicon and germanium, such as range Implantation has come to be the dominant doping technology in Si and GaAs microelectronics, although there has been significant technological development required to achieve this success.

The material and process technologies related to ion implantation in wide bandgap semiconductors are Ion implantation is being applied extensively to silicon device technology.

Two principle features are utilized- 1) charge control in MOS structures for threshold shift, autoregistration, and complementary wells and 2) distribution control in microwave and bipolar structures.

Another feature that has not been extensively exploited is to combine the advantages of the high resolution Ion implantation is a process in which ions of a material are accelerated by an electrical field to impact a solid.

If the ions differ in composition from the target, namely, the specimen to be implanted, they will alter the elemental composition of the target and possibly change the physical, chemical, and/or electrical properties of the specimen.

In particular, the use of energetic ions Ion Implantation of Semiconductors. By G. Carter and W. Grant. viii + (Arnold: London, ) Boards £; paper £. Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing.

The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike Characterisation and Control of Defects in Semiconductors Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties.

Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, cheaper, lower power, and new kinds of electronics generates an Special Book Collections Special Book Collections Specialized Collections Home Ion Implantation in Semiconductors.

Ion Implantation in Semiconductors. Book Cover. Description: The volume presents approximately 30 invited contributions. Purchase this book: eBook. $